PN200A
- Mfr.Part #
- PN200A
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 45V 0.5A TO92-3
- Stock
- 8,499
- In Stock :
- 8,499
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 45V
- Mounting Type :
- Through Hole
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Max Collector Current :
- 500mA
- Pbfree Code :
- yes
- Max Power Dissipation :
- 625mW
- Voltage - Rated DC :
- -45V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 200mA
- Published :
- 2017
- Transistor Application :
- AMPLIFIER
- Packaging :
- Bulk
- Number of Pins :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Weight :
- 201mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 1V
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- -60V
- hFE Min :
- 300
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -400mV
- Gain Bandwidth Product :
- 250MHz
- Width :
- 4.19mm
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Base Part Number :
- PN200
- Length :
- 5.2mm
- Current Rating :
- -500mA
- Polarity/Channel Type :
- PNP
- Frequency :
- 250MHz
- Current - Collector Cutoff (Max) :
- 50nA
- Height :
- 5.33mm
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 250MHz
- Factory Lead Time :
- 7 Weeks
- Collector Emitter Voltage (VCEO) :
- 45V
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- -6V
- Radiation Hardening :
- No
- Datasheets
- PN200A
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 50nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
PN200A Overview
In this device, the DC current gain is 300 @ 10mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -400mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 20mA, 200mA.Keeping the emitter base voltage at -6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).250MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
PN200A Features
the DC current gain for this device is 300 @ 10mA 1V
a collector emitter saturation voltage of -400mV
the vce saturation(Max) is 400mV @ 20mA, 200mA
the emitter base voltage is kept at -6V
the current rating of this device is -500mA
a transition frequency of 250MHz
PN200A Applications
There are a lot of ON Semiconductor
PN200A applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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