PHT6N06T,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

ESD PROTECTED

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.75

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

55V

Power Dissipation-Max :

8.3W Tc

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

5.5A

Terminal Finish :

Tin (Sn)

Published :

1997

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Series :

TrenchMOS™

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G4

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

4

Package / Case :

TO-261-4, TO-261AA

Number of Elements :

1

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

5.6nC @ 10V

Number of Terminations :

4

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 25V

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.15Ohm

Vgs(th) (Max) @ Id :

4V @ 1mA

Avalanche Energy Rating (Eas) :

15 mJ

Surface Mount :

yes

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

150m Ω @ 5A, 10V

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

55V

Pulsed Drain Current-Max (IDM) :

22A

Qualification Status :

Not Qualified