PHT6N06LT,135

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

4

Transistor Application :

SWITCHING

Series :

TrenchMOS™

Terminal Finish :

Tin (Sn)

HTS Code :

8541.29.00.75

RoHS Status :

ROHS3 Compliant

Turn On Time-Max (ton) :

77ns

JESD-30 Code :

R-PDSO-G4

Drain-source On Resistance-Max :

0.15Ohm

Turn Off Time-Max (toff) :

76ns

Published :

1998

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Feedback Cap-Max (Crss) :

50 pF

Terminal Position :

Dual

Package / Case :

TO-261-4, TO-261AA

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.8W Ta 8.3W Tc

Drain to Source Voltage (Vdss) :

55V

Terminal Form :

Gull wing

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

5V

Current - Continuous Drain (Id) @ 25°C :

2.5A Ta

Vgs (Max) :

±13V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

15 mJ

Surface Mount :

yes

DS Breakdown Voltage-Min :

55V

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Vgs(th) (Max) @ Id :

2V @ 1mA

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

10A

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Number of Terminations :

4

Drain Current-Max (Abs) (ID) :

2.5A

Rds On (Max) @ Id, Vgs :

150m Ω @ 5A, 5V

FET Type :

N-Channel

Case Connection :

DRAIN