PHPT610035NKX

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Arrays

Configuration :

SEPARATE, 2 ELEMENTS

Current - Collector Cutoff (Max) :

100nA

JESD-609 Code :

e3

Max Breakdown Voltage :

100V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Factory Lead Time :

20 Weeks

JESD-30 Code :

R-PDSO-G6

Power - Max :

1.25W

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Published :

2014

Mount :

Surface Mount

Number of Elements :

2

Max Collector Current :

3A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reference Standard :

AEC-Q101; IEC-60134

Polarity/Channel Type :

NPN

Case Connection :

COLLECTOR

Collector Emitter Voltage (VCEO) :

330mV

Pin Count :

8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Operating Temperature :

175°C TJ

Number of Terminations :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

140MHz

Max Power Dissipation :

1.25W

Reach Compliance Code :

not_compliant

Transistor Type :

2 NPN (Dual)

Vce Saturation (Max) @ Ib, Ic :

330mV @ 300mA, 3A

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Frequency - Transition :

140MHz

Package / Case :

SOT-1205, 8-LFPAK56

Collector Emitter Breakdown Voltage :

100V

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 1A 10V