PHP79NQ08LT,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.018Ohm

Power Dissipation-Max :

157W Tc

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

101 ns

Series :

TrenchMOS™

Factory Lead Time :

12 Weeks

Rise Time :

102ns

Vgs (Max) :

±15V

Transistor Element Material :

SILICON

Surface Mount :

No

Turn On Delay Time :

30 ns

Pulsed Drain Current-Max (IDM) :

240A

JESD-609 Code :

e3

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

15V

ECCN Code :

EAR99

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

3026pF @ 25V

Drain to Source Breakdown Voltage :

75V

Element Configuration :

Single

Vgs(th) (Max) @ Id :

2V @ 1mA

Max Dual Supply Voltage :

75V

Power Dissipation :

157W

Continuous Drain Current (ID) :

73A

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

HTS Code :

8541.29.00.75

Rds On (Max) @ Id, Vgs :

16m Ω @ 25A, 10V

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Published :

2010

Fall Time (Typ) :

57 ns

Packaging :

Tube

FET Type :

N-Channel

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Number of Pins :

3

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

120 mJ