PHP73N06T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

54nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

73A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Pin Count :

3

FET Type :

N-Channel

Vgs (Max) :

±20V

Mounting Type :

Through Hole

ECCN Code :

EAR99

Number of Elements :

1

Drain-source On Resistance-Max :

0.014Ohm

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

60V

Transistor Application :

SWITCHING

Published :

1997

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

125 mJ

Current - Continuous Drain (Id) @ 25°C :

73A Tc

Power Dissipation-Max :

166W Tc

Vgs(th) (Max) @ Id :

4V @ 1mA

DS Breakdown Voltage-Min :

60V

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Series :

TrenchMOS™

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

Rds On (Max) @ Id, Vgs :

14m Ω @ 25A, 10V

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

2464pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

266A