PHP66NQ03LT,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.0136Ohm

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

66A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

25V

Terminal Position :

Single

Published :

2004

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

93W Tc

Vgs(th) (Max) @ Id :

2V @ 1mA

Drain to Source Voltage (Vdss) :

25V

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

Qualification Status :

Not Qualified

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

90 mJ

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

Matte Tin (Sn)

Series :

TrenchMOS™

JESD-609 Code :

e3

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

66A Tc

Pulsed Drain Current-Max (IDM) :

228A

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 25A, 10V

Vgs (Max) :

±20V

Packaging :

Tube