PHP63NQ03LT,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

68.9A Tc

Packaging :

Tube

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

240A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-220AB

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.0177ohm

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

68.9A

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

13m Ω @ 25A, 10V

Drain to Source Voltage (Vdss) :

30V

Series :

TrenchMOS™

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 25V

DS Breakdown Voltage-Min :

30V

Gate Charge (Qg) (Max) @ Vgs :

9.6nC @ 5V

Power Dissipation-Max :

111W Tc

RoHS Status :

ROHS3 Compliant