PHP29N08T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

JESD-609 Code :

e3

Series :

TrenchMOS™

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

50m Ω @ 14A, 11V

Transistor Application :

SWITCHING

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

108A

Factory Lead Time :

12 Weeks

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

27A

Vgs (Max) :

±30V

Fall Time (Typ) :

9 ns

Rise Time :

70ns

Published :

2009

HTS Code :

8541.29.00.75

Power Dissipation :

88W

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

5V @ 2mA

Case Connection :

DRAIN

Max Dual Supply Voltage :

75V

Turn On Delay Time :

9.5 ns

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 25V

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

11V

Packaging :

Tube

Drain to Source Breakdown Voltage :

75V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Turn-Off Delay Time :

15 ns

Element Configuration :

Single

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.05Ohm

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Package / Case :

TO-220-3

Power Dissipation-Max :

88W Tc