PHP20N06T,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 1mA

Fall Time (Typ) :

40 ns

Case Connection :

DRAIN

Length :

10.3mm

Height :

9.4mm

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Width :

4.7mm

Number of Terminations :

3

Radiation Hardening :

No

Transistor Element Material :

SILICON

FET Type :

N-Channel

Turn-Off Delay Time :

70 ns

Turn On Delay Time :

10 ns

Series :

TrenchMOS™

Published :

2000

Rise Time :

50ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Continuous Drain Current (ID) :

20A

Rds On (Max) @ Id, Vgs :

75m Ω @ 10A, 10V

Power Dissipation-Max :

62W Tc

Input Capacitance (Ciss) (Max) @ Vds :

483pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

20.3A Tc

Factory Lead Time :

12 Weeks

Drain-source On Resistance-Max :

0.075Ohm

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Power Dissipation :

62W

Pulsed Drain Current-Max (IDM) :

81A

ECCN Code :

EAR99

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

55V

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Max Dual Supply Voltage :

55V

Transistor Application :

SWITCHING

HTS Code :

8541.29.00.75

Number of Pins :

3

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Packaging :

Tube