PHP28NQ15T,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Continuous Drain Current (ID) :

28.5A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

57.1A

HTS Code :

8541.29.00.75

Number of Terminations :

3

JESD-609 Code :

e3

Power Dissipation :

150W

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

100 mJ

Radiation Hardening :

No

Element Configuration :

Single

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.065Ohm

Terminal Finish :

Tin (Sn)

Number of Pins :

3

Series :

TrenchMOS™

Operating Temperature :

-55°C~175°C TJ

Turn On Delay Time :

12 ns

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

65m Ω @ 18A, 10V

Vgs(th) (Max) @ Id :

4V @ 1mA

Max Dual Supply Voltage :

150V

Published :

2010

Fall Time (Typ) :

55 ns

Case Connection :

DRAIN

Packaging :

Tube

Rise Time :

20ns

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

150W Tc

Current - Continuous Drain (Id) @ 25°C :

28.5A Tj

Drain to Source Breakdown Voltage :

150V

Turn-Off Delay Time :

12 ns

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 30V

ECCN Code :

EAR99

Number of Elements :

1