PHP27NQ11T,127
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- Mfr.Part #
- PHP27NQ11T,127
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- NEXPERIA PHP27NQ11T - 27.6A, 110
- Stock
- 4,711
- In Stock ：
- 4,711
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Packaging :
- Tube
- Rise Time :
- 43ns
- Number of Terminations :
- 3
- Pulsed Drain Current-Max (IDM) :
- 112A
- Pin Count :
- 3
- Surface Mount :
- No
- Power Dissipation :
- 107W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- HTS Code :
- 8541.29.00.75
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±20V
- Max Dual Supply Voltage :
- 110V
- Continuous Drain Current (ID) :
- 27.6A
- Series :
- TrenchMOS™
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Rds On (Max) @ Id, Vgs :
- 50m Ω @ 14A, 10V
- Fall Time (Typ) :
- 24 ns
- Drain-source On Resistance-Max :
- 0.05Ohm
- Turn-Off Delay Time :
- 32 ns
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 12 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 1240pF @ 25V
- Power Dissipation-Max :
- 107W Tc
- Radiation Hardening :
- No
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Package / Case :
- TO-220-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Avalanche Energy Rating (Eas) :
- 90 mJ
- Published :
- 2010
- Current - Continuous Drain (Id) @ 25°C :
- 27.6A Tc
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 110V
- Turn On Delay Time :
- 12 ns
- Number of Elements :
- 1
- Datasheets
- PHP27NQ11T,127
N-Channel Tube 50m Ω @ 14A, 10V ±20V 1240pF @ 25V 30nC @ 10V TO-220-3
PHP27NQ11T,127 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 90 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1240pF @ 25V.This device conducts a continuous drain current (ID) of 27.6A, which is the maximum continuous current transistor can conduct.Using VGS=110V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 110V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 32 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 112A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 110V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
PHP27NQ11T,127 Features
the avalanche energy rating (Eas) is 90 mJ
a continuous drain current (ID) of 27.6A
a drain-to-source breakdown voltage of 110V voltage
the turn-off delay time is 32 ns
based on its rated peak drain current 112A.
PHP27NQ11T,127 Applications
There are a lot of Nexperia USA Inc.
PHP27NQ11T,127 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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