PHP27NQ11T,127

Manufacturer :

Nexperia

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

TrenchMOS™

Fall Time (Typ) :

24 ns

Pin Count :

3

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

FET Type :

N-Channel

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.05Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1240pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

27.6A Tc

HTS Code :

8541.29.00.75

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

90 mJ

Rise Time :

43ns

Factory Lead Time :

12 Weeks

Published :

2010

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

50m Ω @ 14A, 10V

Drain to Source Breakdown Voltage :

110V

Surface Mount :

No

Power Dissipation-Max :

107W Tc

Power Dissipation :

107W

Vgs(th) (Max) @ Id :

4V @ 1mA

Vgs (Max) :

±20V

Turn-Off Delay Time :

32 ns

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Number of Pins :

3

Number of Terminations :

3

Continuous Drain Current (ID) :

27.6A

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

112A

Max Dual Supply Voltage :

110V

ECCN Code :

EAR99

Turn On Delay Time :

12 ns