PH4030AL115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

5

Gate Charge (Qg) (Max) @ Vgs :

36.6nC @ 10V

Max Power Dissipation :

69W

Continuous Drain Current (ID) :

100A

Drain to Source Breakdown Voltage :

35V

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

30V

Rise Time :

51ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On Max :

4 mΩ

Turn On Delay Time :

28 ns

Drain to Source Resistance :

4mOhm

Element Configuration :

Single

FET Type :

N-Channel

Supplier Device Package :

LFPAK56, Power-SO8

Package / Case :

SC-100, SOT-669

Rds On (Max) @ Id, Vgs :

4mOhm @ 15A, 10V

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Power Dissipation :

69W

Input Capacitance :

2.09nF

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

44 ns

Mounting Type :

Surface Mount

Fall Time (Typ) :

18 ns

Max Operating Temperature :

175°C

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2090pF @ 12V

Min Operating Temperature :

-55°C

Series :

TrenchMOS™

Published :

2011