PH4025L,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

4m Ω @ 25A, 10V

Gate Charge (Qg) (Max) @ Vgs :

21.3nC @ 4.5V

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

150 mJ

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2601pF @ 12V

Reach Compliance Code :

not_compliant

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

99A Tc

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G4

Vgs (Max) :

±20V

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.0062Ohm

Power Dissipation-Max :

46.4W Tc

Surface Mount :

yes

Terminal Position :

Single

Package / Case :

SC-100, SOT-669

JEDEC-95 Code :

MO-235

DS Breakdown Voltage-Min :

25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Pin Count :

4

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Number of Terminations :

4

Series :

TrenchMOS™

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Published :

2007

Vgs(th) (Max) @ Id :

2.15V @ 1mA

Drain Current-Max (Abs) (ID) :

99A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

300A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

LOW CONDUCTION LOSS