PDTD113EUF

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Resistor - Base (R1) :

1 k Ω

DC Current Gain (hFE) (Min) @ Ic, Vce :

33 @ 50mA 5V

Number of Elements :

1

Pin Count :

3

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Collector Emitter Breakdown Voltage :

50V

Mounting Type :

Surface Mount

Number of Terminations :

3

Power - Max :

300mW

Frequency - Transition :

225MHz

Terminal Position :

Dual

Collector Emitter Voltage (VCEO) :

100mV

Transistor Type :

NPN - Pre-Biased

Transistor Application :

SWITCHING

Transition Frequency :

225MHz

Current - Collector Cutoff (Max) :

500nA

Transistor Element Material :

SILICON

Published :

2014

Resistor - Emitter Base (R2) :

1 k Ω

Max Collector Current :

500mA

Number of Pins :

3

Package / Case :

SC-70, SOT-323

Max Power Dissipation :

300mW

Terminal Form :

Gull wing

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Polarity/Channel Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

100mV @ 2.5mA, 50mA