PDTC124EMB

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Max Power Dissipation :

250mW

Mounting Type :

Surface Mount

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

50V

Max Operating Temperature :

150°C

Pin Count :

3

Packaging :

Tape and Reel (TR)

Polarity :

NPN

Collector Emitter Voltage (VCEO) :

150mV

Resistor - Base (R1) :

22 k Ω

Current - Collector Cutoff (Max) :

100nA

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 5V

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Min Operating Temperature :

-65°C

Case Connection :

COLLECTOR

Max Collector Current :

100mA

Factory Lead Time :

8 Weeks

Number of Elements :

1

Frequency - Transition :

230MHz

Element Configuration :

Single

JESD-609 Code :

e3

Number of Terminations :

3

Number of Pins :

3

Transition Frequency :

230MHz

Base Part Number :

PDTC124

Package / Case :

3-XFDFN

Transistor Type :

NPN - Pre-Biased

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Terminal Position :

BOTTOM

Resistor - Emitter Base (R2) :

22 k Ω

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)