PDTC124EE,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Pin Count :

3

Mounting Type :

Surface Mount

Power - Max :

150mW

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Surface Mount :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

60 @ 5mA 5V

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Number of Elements :

1

Power Dissipation-Max (Abs) :

0.15W

Transistor Element Material :

SILICON

Operating Temperature (Max) :

150°C

Terminal Position :

Dual

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Collector Cutoff (Max) :

1μA

Current - Collector (Ic) (Max) :

100mA

Transistor Type :

NPN - Pre-Biased

RoHS Status :

ROHS3 Compliant

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Qualification Status :

Not Qualified

JESD-609 Code :

e3

ECCN Code :

EAR99

JESD-30 Code :

R-PDSO-G3

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

Voltage - Collector Emitter Breakdown (Max) :

50V

Number of Terminations :

3

Resistor - Base (R1) :

22 k Ω

Time@Peak Reflow Temperature-Max (s) :

40

Resistor - Emitter Base (R2) :

22 k Ω

Polarity/Channel Type :

NPN

Terminal Form :

Gull wing

Published :

2003

Base Part Number :

PDTC124

Package / Case :

SC-75, SOT-416