PDTA144EQAZ

Manufacturer :

Nexperia

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Transition Frequency :

180MHz

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-N3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Published :

2014

Collector Emitter Breakdown Voltage :

50V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Resistor - Base (R1) :

47 k Ω

Transistor Application :

SWITCHING

Resistor - Emitter Base (R2) :

47 k Ω

Collector Emitter Voltage (VCEO) :

150mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Current - Collector Cutoff (Max) :

1μA

Factory Lead Time :

4 Weeks

Max Power Dissipation :

280mW

Max Collector Current :

100mA

Transistor Type :

PNP - Pre-Biased

Power - Max :

280mW

Polarity/Channel Type :

PNP

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Case Connection :

COLLECTOR

Terminal Form :

NO LEAD

Reference Standard :

AEC-Q101; IEC-60134

Mounting Type :

Surface Mount

Mount :

Surface Mount

Pin Count :

3

Number of Terminations :

3

Frequency - Transition :

180MHz

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1

Transistor Element Material :

SILICON

Terminal Position :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 5mA 5V

Series :

Automotive, AEC-Q101

Package / Case :

3-XDFN Exposed Pad