PDTA143TE,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Additional Feature :

BUILT IN BIAS RESISTOR

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA 5V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Base Part Number :

PDTA143

Voltage - Collector Emitter Breakdown (Max) :

50V

Resistor - Base (R1) :

4.7 k Ω

Terminal Form :

Gull wing

Package / Case :

SC-75, SOT-416

Operating Temperature (Max) :

150°C

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

Tin (Sn)

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Qualification Status :

Not Qualified

JESD-30 Code :

R-PDSO-G3

Power - Max :

150mW

Transistor Type :

PNP - Pre-Biased

Terminal Position :

Dual

Power Dissipation-Max (Abs) :

0.15W

Published :

2003

Current - Collector (Ic) (Max) :

100mA

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce Saturation (Max) @ Ib, Ic :

150mV @ 250µA, 5mA

Pin Count :

3

Surface Mount :

yes

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

PNP

Peak Reflow Temperature (Cel) :

260