PDTA115EM,315
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- Mfr.Part #
- PDTA115EM,315
- Manufacturer
- Nexperia
- Package / Case
- SC-101, SOT-883
- Datasheet
- Download
- Description
- NEXPERIA PDTA115EM - SMALL SIGNA
- Stock
- 8,429
- In Stock ：
- 8,429
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 50V
- Terminal Position :
- BOTTOM
- Max Power Dissipation :
- 250mW
- Packaging :
- Tape and Reel (TR)
- Resistor - Base (R1) :
- 100 k Ω
- Package / Case :
- SC-101, SOT-883
- Max Operating Temperature :
- 150°C
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 1μA
- Published :
- 2009
- Collector Emitter Breakdown Voltage :
- 50V
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 50V
- Number of Pins :
- 3
- Factory Lead Time :
- 8 Weeks
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Polarity :
- PNP
- Min Operating Temperature :
- -65°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Additional Feature :
- BUILT-IN BIAS RESISTOR RATIO IS 1
- Vce Saturation (Max) @ Ib, Ic :
- 150mV @ 250µA, 5mA
- Base Part Number :
- PDTA115
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 5mA 5V
- Mount :
- Surface Mount
- Resistor - Emitter Base (R2) :
- 100 k Ω
- Max Collector Current :
- 20mA
- Transistor Type :
- PNP - Pre-Biased
- Datasheets
- PDTA115EM,315
PDTA115EM,315 datasheet pdf and Transistors - Bipolar (BJT) - Single, Pre-Biased product details from Nexperia USA Inc. stock available at
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