PDTA114TE,115

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

PDTA114

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Package / Case :

SC-75, SOT-416

Power - Max :

150mW

Number of Terminations :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

200 @ 1mA 5V

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-PDSO-G3

Additional Feature :

BUILT IN BIAS RESISTOR

Transistor Type :

PNP - Pre-Biased

HTS Code :

8541.21.00.95

Power Dissipation-Max (Abs) :

0.15W

Vce Saturation (Max) @ Ib, Ic :

150mV @ 500µA, 10mA

Terminal Form :

Gull wing

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN RESISTOR

Polarity/Channel Type :

PNP

Operating Temperature (Max) :

150°C

Qualification Status :

Not Qualified

Current - Collector (Ic) (Max) :

100mA

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

1μA

Transistor Element Material :

SILICON

Terminal Position :

Dual

Pin Count :

3

Published :

2007

Surface Mount :

yes

Resistor - Base (R1) :

10 k Ω

JESD-609 Code :

e3

Voltage - Collector Emitter Breakdown (Max) :

50V