PD54008L-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Max Power Dissipation :

26.7W

Drain to Source Breakdown Voltage :

25V

Transistor Type :

LDMOS

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Drain to Source Voltage (Vdss) :

25V

Terminal Position :

QUAD

Max Output Power :

8W

Drain Current-Max (Abs) (ID) :

5A

Max Operating Temperature :

150°C

Radiation Hardening :

No

Voltage - Test :

7.5V

Number of Terminations :

5

Time@Peak Reflow Temperature-Max (s) :

30

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Power Dissipation :

26.7W

JESD-609 Code :

e3

Number of Pins :

8

Continuous Drain Current (ID) :

5A

Package / Case :

8-PowerVDFN

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

14

Frequency :

500MHz

Lead Free :

Lead Free

ECCN Code :

EAR99

Element Configuration :

Single

Power Gain :

15dB

Peak Reflow Temperature (Cel) :

260

Transistor Application :

AMPLIFIER

Gate to Source Voltage (Vgs) :

15V

Terminal Finish :

MATTE TIN

Operating Mode :

ENHANCEMENT MODE

Min Operating Temperature :

-65°C

Factory Lead Time :

12 Weeks

Case Connection :

SOURCE

Mount :

Surface Mount

Polarity/Channel Type :

N-Channel

Voltage - Rated DC :

3.1V

JESD-30 Code :

S-PQCC-N5

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Additional Feature :

High Reliability

Current - Test :

200mA

RoHS Status :

ROHS3 Compliant

Current Rating :

5A

Base Part Number :

PD54008