PD54003-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Polarity/Channel Type :

N-Channel

Drain to Source Voltage (Vdss) :

25V

Terminal Position :

Dual

Voltage - Rated DC :

25V

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Voltage - Test :

7.5V

Gate to Source Voltage (Vgs) :

20V

Min Operating Temperature :

-65°C

Transistor Type :

LDMOS

Packaging :

Tube

Factory Lead Time :

25 Weeks

Drain Current-Max (Abs) (ID) :

4A

Max Operating Temperature :

165°C

ECCN Code :

EAR99

Number of Pins :

2

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Lead Free :

Lead Free

Power Gain :

12dB

Package / Case :

PowerSO-10 Exposed Bottom Pad

Current Rating :

4A

Case Connection :

SOURCE

Terminal Form :

Gull wing

Base Part Number :

PD54003

Power Dissipation :

52.8W

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Continuous Drain Current (ID) :

4A

Frequency :

500MHz

Additional Feature :

High Reliability

Current - Test :

50mA

Number of Elements :

1

Radiation Hardening :

No

Max Output Power :

3W

Drain to Source Breakdown Voltage :

25V

Element Configuration :

Single

Transistor Application :

AMPLIFIER

REACH SVHC :

No SVHC

Mount :

Surface Mount

Max Power Dissipation :

52.8W

Operating Mode :

ENHANCEMENT MODE

Pin Count :

10