PD54003-E

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - RF

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

25V

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Case Connection :

SOURCE

Voltage - Rated DC :

25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-Channel

Additional Feature :

High Reliability

Min Operating Temperature :

-65°C

Radiation Hardening :

No

Element Configuration :

Single

Pin Count :

10

Max Power Dissipation :

52.8W

Max Operating Temperature :

165°C

Factory Lead Time :

25 Weeks

Power Dissipation :

52.8W

Drain to Source Voltage (Vdss) :

25V

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

2

Base Part Number :

PD54003

Continuous Drain Current (ID) :

4A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Mount :

Surface Mount

Current Rating :

4A

Voltage - Test :

7.5V

Current - Test :

50mA

Number of Terminations :

2

Packaging :

Tube

Lead Free :

Lead Free

Max Output Power :

3W

Package / Case :

PowerSO-10 Exposed Bottom Pad

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Power Gain :

12dB

Transistor Type :

LDMOS

Frequency :

500MHz

Transistor Application :

AMPLIFIER

Drain Current-Max (Abs) (ID) :

4A

Terminal Position :

Dual

Terminal Form :

Gull wing