P2N2222A

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

625mW

Collector Base Voltage (VCBO) :

75V

Collector Emitter Voltage (VCEO) :

1V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA 10V

hFE Min :

35

Mounting Type :

Through Hole

Voltage - Rated DC :

40V

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

P2N2222

Reach Compliance Code :

not_compliant

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Current Rating :

600mA

Published :

2006

Collector Emitter Saturation Voltage :

1V

Emitter Base Voltage (VEBO) :

6V

RoHS Status :

Non-RoHS Compliant

HTS Code :

8541.21.00.75

Mount :

Through Hole

Collector Emitter Breakdown Voltage :

40V

Max Collector Current :

600mA

Current - Collector Cutoff (Max) :

10nA

Pin Count :

3

Lead Free :

Contains Lead

Vce Saturation (Max) @ Ib, Ic :

1V @ 50mA, 500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

300MHz

Packaging :

Bulk

Transistor Type :

NPN

Element Configuration :

Single

ECCN Code :

EAR99

Power Dissipation :

625mW