NZT44H8
- Mfr.Part #
- NZT44H8
- Manufacturer
- onsemi
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 8A SOT223-4
- Stock
- 2,001
- In Stock :
- 2,001
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 50MHz
- Transistor Type :
- NPN
- Collector Emitter Saturation Voltage :
- 1V
- Number of Pins :
- 4
- Terminal Position :
- Dual
- Current Rating :
- 8A
- Max Breakdown Voltage :
- 60V
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 60
- Collector Emitter Voltage (VCEO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Power Dissipation :
- 1.5W
- Lead Free :
- Lead Free
- Package / Case :
- TO-261-4, TO-261AA
- Max Collector Current :
- 8A
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 4A 1V
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Factory Lead Time :
- 6 Weeks
- Max Power Dissipation :
- 1.5W
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 400mA, 8A
- Transition Frequency :
- 50MHz
- Weight :
- 188mg
- Mount :
- Surface Mount
- Voltage - Rated DC :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Frequency :
- 50MHz
- Case Connection :
- COLLECTOR
- Base Part Number :
- NZT44H8
- Number of Terminations :
- 4
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- NZT44H8

NPN -55°C~150°C TJ 10μA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
NZT44H8 Overview
DC current gain in this device equals 40 @ 4A 1V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 1V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 400mA, 8A.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 8A volts.
NZT44H8 Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 50MHz
NZT44H8 Applications
There are a lot of ON Semiconductor
NZT44H8 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| NZT45H8 | onsemi | 30,545 | TRANS PNP 60V 8A SOT223-4 |
















