NTR1P02T1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Mounting Type :

Surface Mount

Fall Time (Typ) :

9 ns

Factory Lead Time :

15 Weeks

Resistance :

148mOhm

Voltage - Rated DC :

-20V

Packaging :

Cut Tape (CT)

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

-20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Operating Temperature :

-55°C~150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Published :

2005

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Nominal Vgs :

-1.9 V

Width :

1.3mm

Height :

940μm

Pbfree Code :

yes

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

400mW

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

-1.9V

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

1A

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

2.5nC @ 5V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Current - Continuous Drain (Id) @ 25°C :

1A Ta

Current Rating :

-1A

Turn On Delay Time :

7 ns

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

2.3V @ 250μA

ECCN Code :

EAR99

Turn-Off Delay Time :

9 ns

Length :

2.9mm

Pin Count :

3

Rds On (Max) @ Id, Vgs :

180m Ω @ 1.5A, 10V

Continuous Drain Current (ID) :

1A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

165pF @ 5V

Rise Time :

9ns

Vgs (Max) :

±20V

Radiation Hardening :

No

JESD-609 Code :

e3

Element Configuration :

Single

Terminal Form :

Gull wing

Lead Free :

Lead Free

Number of Terminations :

3

Power Dissipation-Max :

400mW Ta

Operating Mode :

ENHANCEMENT MODE