NTR1P02LT1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Package / Case :

TO-236-3, SC-59, SOT-23-3

Radiation Hardening :

No

Resistance :

220mOhm

Power Dissipation :

400mW

Turn-Off Delay Time :

18 ns

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Rds On (Max) @ Id, Vgs :

220m Ω @ 750mA, 4.5V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

7 ns

Height :

940μm

Drain to Source Voltage (Vdss) :

20V

Terminal Form :

Gull wing

Element Configuration :

Single

Threshold Voltage :

-1V

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

12V

Vgs(th) (Max) @ Id :

1.25V @ 250μA

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

-20V

Number of Terminations :

3

Terminal Position :

Dual

Current Rating :

-1.3A

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

Packaging :

Cut Tape (CT)

Vgs (Max) :

±12V

Contact Plating :

Tin

Pin Count :

3

Lead Free :

Lead Free

ECCN Code :

EAR99

Rise Time :

15ns

Current - Continuous Drain (Id) @ 25°C :

1.3A Ta

Factory Lead Time :

14 Weeks

Width :

1.3mm

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

225pF @ 5V

Fall Time (Typ) :

15 ns

Continuous Drain Current (ID) :

1.3A

Voltage - Rated DC :

-20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Published :

2004

Power Dissipation-Max :

400mW Ta

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 4V

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Number of Pins :

3

Length :

2.9mm