NTP65N02RG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

FET Type :

N-Channel

DS Breakdown Voltage-Min :

25V

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

7.6A Ta 58A Tc

Pbfree Code :

No

Qualification Status :

COMMERCIAL

Vgs (Max) :

±20V

Drain Current-Max (Abs) (ID) :

7.6A

Gate Charge (Qg) (Max) @ Vgs :

9.5nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

1.04W Ta 62.5W Tc

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 20A, 10V

Avalanche Energy Rating (Eas) :

60 mJ

JESD-30 Code :

R-PSFM-T3

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-220-3

Number of Terminations :

3

Packaging :

Tube

JESD-609 Code :

e3

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

25V

Terminal Finish :

MATTE TIN

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Surface Mount :

No

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1.33pF @ 20V

Pulsed Drain Current-Max (IDM) :

160A

Drain-source On Resistance-Max :

0.0105Ohm

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2V @ 250μA