NTP60N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

60A

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Current - Continuous Drain (Id) @ 25°C :

60A Ta

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead

Power Dissipation :

150W

Power Dissipation-Max :

2.4W Ta 150W Tj

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Fall Time (Typ) :

142.5 ns

RoHS Status :

Non-RoHS Compliant

ECCN Code :

EAR99

Terminal Finish :

Tin/Lead (Sn/Pb)

Pbfree Code :

No

Voltage - Rated DC :

60V

Turn-Off Delay Time :

94.5 ns

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

3220pF @ 25V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

454 mJ

FET Type :

N-Channel

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Packaging :

Tube

Reach Compliance Code :

not_compliant

Vgs (Max) :

±20V

Pin Count :

3

Drain-source On Resistance-Max :

0.014Ohm

Pulsed Drain Current-Max (IDM) :

180A

Mount :

Through Hole

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

81nC @ 10V

Rise Time :

180.7ns

Published :

2009

Peak Reflow Temperature (Cel) :

240

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Rds On (Max) @ Id, Vgs :

14m Ω @ 30A, 10V

JESD-609 Code :

e0

Drain to Source Breakdown Voltage :

60V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Through Hole

Element Configuration :

Single

Current Rating :

60A