NTK3139PT5G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

32.7 ns

Drain Current-Max (Abs) (ID) :

0.66A

Transistor Element Material :

SILICON

Fall Time (Typ) :

5.8 ns

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 16V

Turn On Delay Time :

9 ns

Pbfree Code :

yes

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Power Dissipation :

310mW

Number of Terminations :

3

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

660mA Ta

Vgs (Max) :

±6V

Pulsed Drain Current-Max (IDM) :

1.2A

Contact Plating :

Tin

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

310mW Ta

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

6V

Number of Pins :

3

Terminal Position :

Dual

Factory Lead Time :

7 Weeks

Terminal Form :

Flat

Drain to Source Breakdown Voltage :

-20V

Resistance :

380mOhm

Number of Elements :

1

Lead Free :

Lead Free

Surface Mount :

yes

Continuous Drain Current (ID) :

-780mA

ECCN Code :

EAR99

Published :

2006

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

20V

Rise Time :

5.8ns

Package / Case :

SOT-723

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

480m Ω @ 780mA, 4.5V

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Transistor Application :

SWITCHING