NTK3134NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

20V

ECCN Code :

EAR99

Height :

550μm

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

310mW

Continuous Drain Current (ID) :

890mA

Terminal Form :

Flat

FET Type :

N-Channel

Factory Lead Time :

4 Weeks

Length :

1.25mm

Pbfree Code :

yes

Power Dissipation-Max :

310mW Ta

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 16V

Number of Elements :

1

Turn-Off Delay Time :

17.3 ns

Drain Current-Max (Abs) (ID) :

0.89A

Terminal Position :

Dual

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Number of Terminations :

3

Radiation Hardening :

No

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Vgs (Max) :

±6V

Published :

2006

Rise Time :

4.8ns

Packaging :

Tape and Reel (TR)

Resistance :

200mOhm

Width :

850μm

Fall Time (Typ) :

4.8 ns

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

3

Turn On Delay Time :

6.7 ns

Surface Mount :

yes

Package / Case :

SOT-723

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Element Configuration :

Single

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

350m Ω @ 890mA, 4.5V

Gate to Source Voltage (Vgs) :

6V

Peak Reflow Temperature (Cel) :

260

Contact Plating :

Tin

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

1.2V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

750mA Ta