NTF3055-160T1

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Mfr.Part #
NTF3055-160T1
Manufacturer
onsemi
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
MOSFET N-CH 60V 2A SOT223
Stock
33,332
In Stock :
33,332

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Avalanche Energy Rating (Eas) :
65 mJ
Drain-source On Resistance-Max :
0.16Ohm
Pulsed Drain Current-Max (IDM) :
6A
Operating Mode :
ENHANCEMENT MODE
Transistor Element Material :
SILICON
RoHS Status :
Non-RoHS Compliant
DS Breakdown Voltage-Min :
60V
Drain Current-Max (Abs) (ID) :
2A
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
280pF @ 25V
Terminal Position :
Dual
Operating Temperature :
-55°C~175°C TJ
Qualification Status :
COMMERCIAL
JESD-609 Code :
e0
Vgs(th) (Max) @ Id :
4V @ 250µA
Surface Mount :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
1.3W Ta
Drain to Source Voltage (Vdss) :
60V
Pin Count :
4
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
160m Ω @ 1A, 10V
Terminal Form :
Gull wing
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Terminations :
4
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Case Connection :
DRAIN
Vgs (Max) :
±20V
Package / Case :
TO-261-4, TO-261AA
Current - Continuous Drain (Id) @ 25°C :
2A Ta
Terminal Finish :
TIN LEAD
JESD-30 Code :
R-PDSO-G4
Packaging :
Tape and Reel (TR)
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Datasheets
NTF3055-160T1
Introducing Transistors - FETs, MOSFETs - Single onsemi NTF3055-160T1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Number of Terminations:4, Package / Case:TO-261-4, TO-261AA, NTF3055-160T1 pinout, NTF3055-160T1 datasheet PDF, NTF3055-160T1 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTF3055-160T1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTF3055-160T1


N-Channel Tape & Reel (TR) 160m Ω @ 1A, 10V ±20V 280pF @ 25V 14nC @ 10V 60V TO-261-4, TO-261AA

NTF3055-160T1 Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 65 mJ.A device's maximal input capacitance is 280pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 2A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 6A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 60V.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

NTF3055-160T1 Features


the avalanche energy rating (Eas) is 65 mJ
based on its rated peak drain current 6A.
a 60V drain to source voltage (Vdss)


NTF3055-160T1 Applications


There are a lot of Rochester Electronics, LLC
NTF3055-160T1 applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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