NTF3055-100T1

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

455pF @ 25V

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Dual Supply Voltage :

60V

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

110m Ω @ 1.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Current Rating :

3A

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Contact Plating :

Tin

Continuous Drain Current (ID) :

3A

Width :

3.7mm

Drain Current-Max (Abs) (ID) :

3A

JESD-609 Code :

e3

Number of Pins :

4

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Position :

Dual

Height :

1.65mm

Rise Time :

14ns

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Package / Case :

TO-261-4, TO-261AA

Resistance :

110mOhm

Peak Reflow Temperature (Cel) :

260

Packaging :

Tape and Reel (TR)

Factory Lead Time :

8 Weeks

ECCN Code :

EAR99

Fall Time (Typ) :

13 ns

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Pin Count :

4

Power Dissipation :

2.1W

Number of Elements :

1

Turn-Off Delay Time :

21 ns

Pbfree Code :

yes

Published :

2006

Number of Terminations :

4

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

1.3W Ta

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

3 V

Drain to Source Breakdown Voltage :

60V

REACH SVHC :

No SVHC

Radiation Hardening :

No

Surface Mount :

yes

Transistor Element Material :

SILICON

Length :

6.7mm

Threshold Voltage :

3V

Termination :

SMD/SMT

Turn On Delay Time :

9.4 ns

Case Connection :

DRAIN

Voltage - Rated DC :

60V