NTF2955T1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

6.5mm

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Published :

2006

Threshold Voltage :

-4V

REACH SVHC :

No SVHC

Height :

1.57mm

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

14.3nC @ 10V

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

260

Packaging :

Cut Tape (CT)

Surface Mount :

yes

Drain to Source Breakdown Voltage :

-60V

Vgs(th) (Max) @ Id :

4V @ 1mA

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Rds On (Max) @ Id, Vgs :

185m Ω @ 2.4A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

4

Voltage - Rated DC :

-60V

Terminal Finish :

Tin (Sn)

Terminal Position :

Dual

Package / Case :

TO-261-4, TO-261AA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

11 ns

Number of Elements :

1

Turn-Off Delay Time :

65 ns

Drain to Source Voltage (Vdss) :

60V

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

225 mJ

Element Configuration :

Single

Continuous Drain Current (ID) :

2.6A

Pin Count :

4

FET Type :

P-Channel

ECCN Code :

EAR99

Terminal Form :

Gull wing

Factory Lead Time :

8 Weeks

Current Rating :

-2.6A

Power Dissipation :

2.3W

Number of Pins :

4

Vgs (Max) :

±20V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Power Dissipation-Max :

1W Ta

Width :

3.5mm

Rise Time :

7.6ns

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

492pF @ 25V

Fall Time (Typ) :

38 ns

Time@Peak Reflow Temperature-Max (s) :

40

Mounting Type :

Surface Mount

Resistance :

145mOhm