NTF2955PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Rise Time :

7.6ns

RoHS Status :

RoHS Compliant

Pin Count :

4

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 1mA

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

P-Channel

Qualification Status :

Not Qualified

Published :

2008

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Number of Pins :

4

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

14.3nC @ 10V

Number of Terminations :

4

Turn-Off Delay Time :

65 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

2.3W

Fall Time (Typ) :

38 ns

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

492pF @ 25V

Power Dissipation-Max :

1W Ta

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

-60V

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

185m Ω @ 2.4A, 10V

Drain to Source Voltage (Vdss) :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Case Connection :

DRAIN

Continuous Drain Current (ID) :

-2.6A

Package / Case :

TO-261-4, TO-261AA

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Vgs (Max) :

±20V