NTE192A

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature Classification :

Military

Polarity/Channel Type :

NPN

Configuration :

Single

Emitter-Base Voltage :

5(V)

Mounting :

Through Hole

Collector Current (DC) :

0.5(A)

Terminal Form :

Wire

DC Current Gain-Min (hFE) :

180

Terminal Position :

BOTTOM

Surface Mount :

No

Series :

-

Operating Temp Range :

-55C to 150C

Voltage - Collector Emitter Breakdown (Max) :

50 V

Package :

Bag

Transistor Element Material :

SILICON

Number of Elements :

1

Qualification Status :

Not Qualified

Operating Temperature :

150°C (TJ)

Number of Terminals :

3

Transistor Type :

NPN

Current - Collector (Ic) (Max) :

500 mA

Collector Current-Max (IC) :

0.5 A

HTS Code :

8541.21.00.75

Vce Saturation (Max) @ Ib, Ic :

300mV @ 3mA, 50mA

Pin Count :

3

Product Status :

Active

Collector-Emitter Voltage-Max :

50 V

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 2mA, 4.5V

Manufacturer :

NTE Electronics

Power Dissipation :

0.56(W)

Frequency - Transition :

-

Subcategory :

Other Transistors

Reach Compliance Code :

Unknown

Package / Case :

TO-92HS

Collector-Base Voltage :

50(V)

Transistor Polarity :

NPN

Transistor Application :

SWITCHING

Category :

Bipolar Small Signal

Supplier Device Package :

TO-92HS

Power - Max :

560 mW

Package Shape :

Round

Package Type :

TO-92HS

JESD-30 Code :

O-PBFM-W3

Current - Collector Cutoff (Max) :

100nA (ICBO)

Power Dissipation-Max (Abs) :

0.6 W

DC Current Gain :

180@

Rad Hardened :

No

Output Power :

Not Required(W)

ECCN Code :

EAR99