NTE186

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Collector Emitter Breakdown (Max) :

60 V

Power - Max :

2.1 W

Operating Temperature Classification :

Military

Transistor Type :

NPN

Current - Collector (Ic) (Max) :

3 A

Case Connection :

COLLECTOR

Frequency - Transition :

50MHz

Power Dissipation Ambient-Max :

12.5 W

Package / Case :

TO-202 Long Tab

Qualification Status :

Not Qualified

Operating Temperature :

-55°C ~ 150°C (TJ)

Polarity/Channel Type :

NPN

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Operating Temp Range :

-55C to 150C

Frequency :

50(MHz)

Package Shape :

RECTANGULAR

JESD-30 Code :

R-PSFM-T3

Category :

Bipolar Power

Configuration :

Single

Collector-Emitter Voltage-Max :

60 V

Package Type :

TO-202

Package :

Bag

Power Dissipation-Max (Abs) :

12 W

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 1A

Terminal Position :

Single

Subcategory :

Other Transistors

Transistor Element Material :

SILICON

Output Power :

Not Required(W)

Mounting Type :

Through Hole

Series :

-

HTS Code :

8541.29.00.75

Rad Hardened :

No

Supplier Device Package :

TO-202

DC Current Gain-Min (hFE) :

20

Surface Mount :

No

Mounting :

Through Hole

JEDEC-95 Code :

TO-202

Product Status :

Active

ECCN Code :

EAR99

Collector Current (DC) :

3(A)

Pin Count :

3 +Tab

Terminal Form :

THROUGH-HOLE

Number of Terminals :

3

Collector Current-Max (IC) :

3 A

Emitter-Base Voltage :

5(V)

Transistor Polarity :

NPN

Number of Elements :

1

Power Dissipation :

2.1(W)

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 200mA, 1V

Current - Collector Cutoff (Max) :

10μA

Manufacturer :

NTE Electronics