NTE133

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - JFETs

Product Status :

Active

Power Dissipation-Max (Abs) :

0.3 W

FET Technology :

JUNCTION

Terminal Position :

BOTTOM

Gate to Source Voltage (Vgs) :

-25 V

Mounting Type :

Through Hole

Voltage - Breakdown (V(BR)GSS) :

25 V

Breakdown Voltage :

-25 V

Max Power Dissipation :

300 mW

Weight :

4.535924 g

Pin Count :

3

Manufacturer :

NTE Electronics

Series :

-

Operating Temperature :

-55°C ~ 150°C (TJ)

Input Capacitance (Ciss) (Max) @ Vds :

-

Width :

5.2832 mm

Qualification Status :

Not Qualified

Transistor Application :

AMPLIFIER

Supplier Device Package :

TO-106

Configuration :

Single

RoHS :

Compliant

Height :

4.572 mm

Power - Max :

300 mW

Mount :

Through Hole

Package :

Bag

HTS Code :

8541.21.00.95

Current - Drain (Idss) @ Vds (Vgs=0) :

500 μA @ 15 V

Continuous Drain Current (ID) :

500 µA

Drain to Source Voltage (Vdss) :

25 V

Transistor Element Material :

SILICON

Reach Compliance Code :

Unknown

Max Operating Temperature :

150 °C

Operating Mode :

Depletion Mode

Min Operating Temperature :

-55 °C

Surface Mount :

No

JEDEC-95 Code :

TO-106

Power Dissipation :

300 mW

Polarity/Channel Type :

N-Channel

Number of Pins :

3

Drain to Source Breakdown Voltage :

-6.5 V

Subcategory :

Other Transistors

FET Type :

N-Channel

Number of Terminals :

3

Element Configuration :

Single

REACH SVHC :

Unknown

Package / Case :

TO-106-3 Domed

JESD-30 Code :

O-PBCY-W3

Voltage - Cutoff (VGS off) @ Id :

6.5 V @ 1 nA

Package Shape :

Round

Number of Elements :

1

Length :

88.9 mm

DS Breakdown Voltage-Min :

25 V

ECCN Code :

EAR99

Feedback Cap-Max (Crss) :

2 pF

Terminal Form :

Wire