NTE130MP
- Mfr.Part #
- NTE130MP
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS NPN 60V 15A TO3
- Stock
- 39
- In Stock :
- 39
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 76.2 mm
- Height :
- 12.7 mm
- Configuration :
- SEPARATE, 2 ELEMENTS
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 3.3A, 10A
- Operating Temperature :
- -65°C ~ 200°C (TJ)
- Surface Mount :
- No
- Package Shape :
- Round
- Product Status :
- Active
- Transistor Element Material :
- SILICON
- Package :
- Bag
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Collector-Emitter Voltage-Max :
- 60 V
- Min Operating Temperature :
- -65 °C
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 4A, 4V
- Max Collector Current :
- 15 A
- Current - Collector (Ic) (Max) :
- 15 A
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- TO-3
- Emitter Base Voltage (VEBO) :
- 7 V
- Collector Current-Max (IC) :
- 15 A
- DC Current Gain-Min (hFE) :
- 20
- Polarity/Channel Type :
- NPN
- Series :
- -
- Transistor Application :
- AMPLIFIER
- Number of Terminals :
- 2
- Subcategory :
- Other Transistors
- Max Operating Temperature :
- 200 °C
- Supplier Device Package :
- TO-3
- Power - Max :
- 115 W
- Qualification Status :
- Not Qualified
- Power Dissipation Ambient-Max :
- 115 W
- Current - Collector Cutoff (Max) :
- 700µA
- Length :
- 152.4 mm
- JESD-30 Code :
- O-MBFM-P2
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Form :
- PIN/PEG
- Reach Compliance Code :
- Unknown
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 100 V
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Number of Elements :
- 2
- Package / Case :
- TO-204AA, TO-3
- Weight :
- 72.574779 g
- Additional Feature :
- MATCHED PAIR OF NTE130
- Terminal Position :
- BOTTOM
- RoHS :
- Compliant
- Mount :
- Through Hole
- Manufacturer :
- NTE Electronics
- Frequency - Transition :
- 2.5MHz
- Collector Emitter Voltage (VCEO) :
- 60 V
- Datasheets
- NTE130MP

NPN -65°C ~ 200°C (TJ) 700μA 2 Elements SILICON NPN TO-204AA, TO-3 Through Hole
NTE130MP Overview
In this device, the DC current gain is 20 @ 4A, 4V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 3V @ 3.3A, 10A.With the emitter base voltage set at 7 V, an efficient operation can be achieved.Product comes in the supplier's device package TO-3.60 V is set as the maximum collector-emitter voltage.There is a 60 V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 15 A volts at Single BJT transistors maximum.
NTE130MP Features
the DC current gain for this device is 20 @ 4A, 4V
the vce saturation(Max) is 3V @ 3.3A, 10A
the emitter base voltage is kept at 7 V
the supplier device package of TO-3
NTE130MP Applications
There are a lot of NTE Electronics, Inc
NTE130MP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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