NTE129

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain :

75

Package :

Bag

Polarity/Channel Type :

PNP

Output Power :

Not Required(W)

Operating Temp Range :

-65C to 200C

Collector-Base Voltage :

80(V)

Collector Current (DC) :

1(A)

HTS Code :

8541.29.00.95

Number of Elements :

1

Operating Temperature Classification :

Military

Reach Compliance Code :

Unknown

Pin Count :

3

DC Current Gain-Min (hFE) :

90

Package / Case :

TO-205AD, TO-39-3 Metal Can

Frequency :

400(MHz)

Mounting :

Through Hole

Transistor Application :

SWITCHING

Case Connection :

COLLECTOR

Supplier Device Package :

TO-39

Voltage - Collector Emitter Breakdown (Max) :

80 V

Category :

Bipolar Power

Collector Current-Max (IC) :

1 A

Package Shape :

Round

Emitter-Base Voltage :

5(V)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max (Abs) :

1 W

Series :

-

Product Status :

Active

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Rad Hardened :

No

Power - Max :

1.25 W

Terminal Form :

Wire

Transistor Type :

PNP

Subcategory :

Other Transistors

JESD-30 Code :

O-MBCY-W3

Operating Temperature :

-65°C ~ 200°C (TJ)

Number of Terminals :

3

Frequency - Transition :

-

Transistor Polarity :

PNP

Power Dissipation :

1.25(W)

Configuration :

Single

JEDEC-95 Code :

TO-39

Mounting Type :

Through Hole

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA, 5V

Terminal Position :

BOTTOM

Qualification Status :

Not Qualified

Current - Collector (Ic) (Max) :

1 A

Surface Mount :

No

Transistor Element Material :

SILICON

Manufacturer :

NTE Electronics

Current - Collector Cutoff (Max) :

50nA (ICBO)

Package Type :

TO-39