NTE128

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Power - Max :

800 mW

JEDEC-95 Code :

TO-39

Reach Compliance Code :

Unknown

Rad Hardened :

No

DC Current Gain :

50

Package Type :

TO-39

Transistor Element Material :

SILICON

Current - Collector Cutoff (Max) :

10nA (ICBO)

Number of Elements :

1

Operating Temp Range :

-65C to 200C

HTS Code :

8541.21.00.95

Number of Terminals :

3

Frequency - Transition :

400MHz

JESD-30 Code :

O-MBCY-W3

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Manufacturer :

NTE Electronics

Transistor Type :

NPN

Transistor Application :

SWITCHING

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pin Count :

3

DC Current Gain-Min (hFE) :

15

Mounting :

Through Hole

Power Dissipation :

0.8(W)

Package / Case :

TO-205AD, TO-39-3 Metal Can

Voltage - Collector Emitter Breakdown (Max) :

80 V

Product Status :

Active

Collector Current (DC) :

1(A)

Polarity/Channel Type :

NPN

Transistor Polarity :

NPN

Configuration :

Single

Frequency :

400(MHz)

Series :

-

ECCN Code :

EAR99

Emitter-Base Voltage :

7(V)

Category :

Bipolar Power

Operating Temperature Classification :

Military

Power Dissipation-Max (Abs) :

1 W

Terminal Form :

Wire

Output Power :

Not Required(W)

Package Shape :

Round

Collector-Emitter Voltage-Max :

80 V

Terminal Position :

BOTTOM

Operating Temperature :

-65°C ~ 200°C (TJ)

Vce Saturation (Max) @ Ib, Ic :

500mV @ 50mA, 500mA

Current - Collector (Ic) (Max) :

1 A

Collector-Base Voltage :

140(V)

Package :

Bag

Supplier Device Package :

TO-39

Collector Current-Max (IC) :

1 A

Subcategory :

Other Transistors

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA, 10V

Case Connection :

COLLECTOR