NTE123A

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Voltage - Collector Emitter Breakdown (Max) :

40 V

Pin Count :

3

Mounting Type :

Through Hole

Collector Current (DC) :

0.6(A)

Operating Temperature Classification :

Military

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 150mA, 1V

Product Status :

Active

Collector-Base Voltage :

60(V)

Number of Elements :

1

DC Current Gain :

20

Power - Max :

625 mW

Package Type :

TO-92

Current - Collector Cutoff (Max) :

100nA

Output Power :

Not Required(W)

Power Dissipation :

0.35(W)

Category :

Bipolar Small Signal

Series :

-

Rad Hardened :

No

Current - Collector (Ic) (Max) :

600 mA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Transistor Polarity :

NPN

Supplier Device Package :

TO-92

Mounting :

Through Hole

Frequency :

250(MHz)

Operating Temperature :

-55°C ~ 150°C (TJ)

Configuration :

Single

Transistor Type :

NPN

Vce Saturation (Max) @ Ib, Ic :

750mV @ 50mA, 500mA

Operating Temp Range :

-55C to 150C

Emitter-Base Voltage :

6(V)

Package :

Bag

Frequency - Transition :

250MHz

Manufacturer :

NTE Electronics