NTD60N03T4
- Mfr.Part #
- NTD60N03T4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 28V 60A DPAK
- Stock
- 9,834
- In Stock :
- 9,834
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSSO-G2
- Mounting Type :
- Surface Mount
- Terminal Finish :
- TIN LEAD
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Case Connection :
- DRAIN
- Qualification Status :
- COMMERCIAL
- Packaging :
- Tape and Reel (TR)
- Reach Compliance Code :
- Unknown
- Number of Terminations :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Power Dissipation-Max :
- 75W Tc
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- Pin Count :
- 3
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 30nC @ 4.5V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 733 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Surface Mount :
- yes
- Drain Current-Max (Abs) (ID) :
- 60A
- DS Breakdown Voltage-Min :
- 28V
- Pulsed Drain Current-Max (IDM) :
- 120A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 28V
- JESD-609 Code :
- e0
- Pbfree Code :
- No
- RoHS Status :
- Non-RoHS Compliant
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drain-source On Resistance-Max :
- 0.0075Ohm
- Number of Elements :
- 1
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 2.15pF @ 24V
- Rds On (Max) @ Id, Vgs :
- 7.5m Ω @ 30A, 10V
- Datasheets
- NTD60N03T4

N-Channel Tape & Reel (TR) 7.5m Ω @ 30A, 10V ±20V 2.15pF @ 24V 30nC @ 4.5V 28V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD60N03T4 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 733 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2.15pF @ 24V.There is no drain current on this device since the maximum continuous current it can conduct is 60A.There is a peak drain current of 120A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 28V, it should remain above the 28V level.The transistor must receive a 28V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
NTD60N03T4 Features
the avalanche energy rating (Eas) is 733 mJ
based on its rated peak drain current 120A.
a 28V drain to source voltage (Vdss)
NTD60N03T4 Applications
There are a lot of Rochester Electronics, LLC
NTD60N03T4 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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