NTD60N02RT4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

25V

Rds On (Max) @ Id, Vgs :

10.5m Ω @ 20A, 10V

Drain-source On Resistance-Max :

0.0105Ohm

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

25V

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Pin Count :

3

Number of Terminations :

2

Power Dissipation-Max :

1.25W Ta 58W Tc

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

8.5A Ta 32A Tc

Vgs(th) (Max) @ Id :

2V @ 250μA

Avalanche Energy Rating (Eas) :

60 mJ

Terminal Form :

Gull wing

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Finish :

TIN LEAD

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 4.5V

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e0

Qualification Status :

COMMERCIAL

RoHS Status :

Non-RoHS Compliant

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

240

Drain Current-Max (Abs) (ID) :

32A

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

1.33pF @ 20V