NTD4910NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DS Breakdown Voltage-Min :

30V

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.013Ohm

Qualification Status :

COMMERCIAL

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

8.2A

Number of Terminations :

2

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

15.4nC @ 10V

Avalanche Energy Rating (Eas) :

25.3 mJ

Number of Elements :

1

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

152A

Power Dissipation-Max :

1.37W Ta 27.3W Tc

Terminal Position :

Single

Mounting Type :

Surface Mount

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Pin Count :

3

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

Gull wing

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1.203pF @ 15V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

8.2A Ta 37A Tc

Rds On (Max) @ Id, Vgs :

9m Ω @ 30A, 10V