NTD4302T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Packaging :

Tape and Reel (TR)

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

30V

Resistance :

7.8mOhm

Pin Count :

4

Rds On (Max) @ Id, Vgs :

10m Ω @ 20A, 10V

JESD-609 Code :

e3

Surface Mount :

yes

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Turn-Off Delay Time :

40 ns

Case Connection :

DRAIN

Rise Time :

15ns

Input Capacitance (Ciss) (Max) @ Vds :

2400pF @ 24V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

68A

Transistor Application :

SWITCHING

Radiation Hardening :

No

Element Configuration :

Single

Power Dissipation-Max :

1.04W Ta 75W Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Current - Continuous Drain (Id) @ 25°C :

8.4A Ta 68A Tc

Nominal Vgs :

1.9 V

Continuous Drain Current (ID) :

18.5A

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Terminal Form :

Gull wing

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Voltage - Rated DC :

30V

Number of Terminations :

2

Threshold Voltage :

1.9V

Time@Peak Reflow Temperature-Max (s) :

40

Pulsed Drain Current-Max (IDM) :

28A

Number of Pins :

4

Factory Lead Time :

2 Weeks

Published :

2005

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

722 mJ

Power Dissipation :

75W

Number of Elements :

1