NTD4865NT4G
- Mfr.Part #
- NTD4865NT4G
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 8.5A/44A DPAK
- Stock
- 32,071
- In Stock :
- 32,071
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pulsed Drain Current-Max (IDM) :
- 87A
- Packaging :
- Tape and Reel (TR)
- Qualification Status :
- COMMERCIAL
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 827pF @ 12V
- Drain Current-Max (Abs) (ID) :
- 8.5A
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.0109ohm
- Current - Continuous Drain (Id) @ 25°C :
- 8.5A Ta 44A Tc
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 10.9m Ω @ 30A, 10V
- Terminal Finish :
- Tin
- Gate Charge (Qg) (Max) @ Vgs :
- 10.8nC @ 4.5V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Power Dissipation-Max :
- 1.27W Ta 33.3W Tc
- Operating Temperature :
- -55°C~175°C TJ
- Number of Terminations :
- 2
- FET Type :
- N-Channel
- DS Breakdown Voltage-Min :
- 25V
- Number of Elements :
- 1
- Surface Mount :
- yes
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 25V
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pbfree Code :
- yes
- Datasheets
- NTD4865NT4G

N-Channel Tape & Reel (TR) 10.9m Ω @ 30A, 10V ±20V 827pF @ 12V 10.8nC @ 4.5V 25V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD4865NT4G Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 50 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 827pF @ 12V.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 8.5A.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 87A.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 25V in order to maintain normal operation.Operating this transistor requires a 25V drain to source voltage (Vdss).By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
NTD4865NT4G Features
the avalanche energy rating (Eas) is 50 mJ
based on its rated peak drain current 87A.
a 25V drain to source voltage (Vdss)
NTD4865NT4G Applications
There are a lot of Rochester Electronics, LLC
NTD4865NT4G applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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