NTD4863NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

25V

Current - Continuous Drain (Id) @ 25°C :

9.2A Ta 49A Tc

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain to Source Voltage (Vdss) :

25V

Avalanche Energy Rating (Eas) :

60.5 mJ

Pulsed Drain Current-Max (IDM) :

98A

Drain Current-Max (Abs) (ID) :

9.2A

Terminal Finish :

Tin

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

990pF @ 12V

Qualification Status :

COMMERCIAL

Case Connection :

DRAIN

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Power Dissipation-Max :

1.27W Ta 36.6W Tc

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

13.5nC @ 4.5V

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Pin Count :

3

Number of Terminations :

2

Vgs (Max) :

±20V

Surface Mount :

yes

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

9.3m Ω @ 30A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain-source On Resistance-Max :

0.014Ohm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Number of Elements :

1