NTD4815N-35G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

2.5 V

Published :

2008

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Turn On Delay Time :

10.5 ns

Pin Count :

3

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

14.1nC @ 11.5V

Mounting Type :

Through Hole

Power Dissipation-Max :

1.26W Ta 32.6W Tc

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 12V

Current Rating :

35A

Length :

6.73mm

FET Type :

N-Channel

Voltage - Rated DC :

30V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Height :

2.38mm

Continuous Drain Current (ID) :

35A

Drain-source On Resistance-Max :

0.025Ohm

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

87A

Packaging :

Tube

Dual Supply Voltage :

30V

Turn-Off Delay Time :

11.4 ns

Drain Current-Max (Abs) (ID) :

6.9A

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

15m Ω @ 30A, 10V

Rise Time :

21.4ns

Drain to Source Breakdown Voltage :

30V

Fall Time (Typ) :

21.4 ns

Lead Free :

Lead Free

Width :

7.49mm

Power Dissipation :

32.6W

Pbfree Code :

yes

Surface Mount :

No

JESD-609 Code :

e3

Vgs (Max) :

±20V

Threshold Voltage :

1.5V

Termination :

Through Hole

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Avalanche Energy Rating (Eas) :

60.5 mJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 11.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Factory Lead Time :

2 Weeks

Case Connection :

DRAIN

Number of Terminations :

3

Package / Case :

TO-251-3 Stub Leads, IPak

Current - Continuous Drain (Id) @ 25°C :

6.9A Ta 35A Tc